Isostatic Graphite for Semiconductor Crystal Growth Furnaces
Description
Isostatic Graphite for Thermal Field of (CZ) Crystal Growth Furnaces
The Czochralski (CZ) method is commonly used to grow semiconductor-grade silicon single crystals. Isostatic Graphite is the preferred material for such applications, particularly in the presence of extremely high temperatures and corrosive environments during crystal growth. Therefore, high-quality isostatic press graphite are necessary.
The thermal system is one of the most important conditions for the crystallization of silicon single crystals, and the distribution of the temperature gradient in the hot zone has a direct impact on the ability to successfully pull single crystals as well as the required quality of the silicon single crystals. Most of the components in the hot zone required for single crystal pulling are made of isostatic graphite block, such as graphite heaters and graphite crucibles, which are processed of isostatically pressed graphite.
Isostatic Graphite for Thermal Field of (CZ) Crystal Growth Furnaces
SHJ as a graphite supplier, has extensive experience in the production of high purity specialty graphite block materials, and offers isostatically pressed graphite for the semiconductor industry’s CZ method of straight monocrystalline silicon pulling.
For instance, the graphite crucible in the graphite hot zone has stringent requirements on its load-bearing capacity, mechanical strength, and impact resistance. The reason behind these requirements is the graphite crucible needs to support the weight of molten silicon for an extended period during the process of single-crystal growth while rotating. Additionally, it must withstand the impact caused by the crystallization of silicon melt at the end of the pulling process.
SHJ’s high-quality isostatic graphite can extend the lifespan of the graphite crucible, thus reducing the cost of the single crystal pulling process.
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