High Purity Graphite Powder
Description
Particle size: 35±5 microns;
Packing: 5kg MOQ;
Applications
high purity silicon carbide powder is the raw material for PVT method silicon carbide growth, it is synthesized by high purity graphite powder and silica powder.
In order to meet the demand of silicon carbide single crystal growth, silicon carbide powder synthesis equipment has become very important. In this equipment, high purity graphite powder and silicon powder directly react under high temperature conditions, through a precise high temperature synthesis process, to produce silicon carbide powder.
The key technical difficulties of the synthesis equipment include high temperature and high vacuum sealing and control, vacuum chamber water cooling, vacuum and measurement system, electrical control system, and heating and coupling technology of powder synthesis crucible.
By overcoming these technical challenges, the purity of the synthesized powder can reach a staggering 99.9995%, providing an excellent crystal quality basis for subsequent silicon carbide growth.
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